2SB1172 参数 Datasheet PDF下载

Power Transistors

2SB1172, 2SB1172A

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SD1742, 2SD742A

■

Features

•

High forward current transfer ratio h

FE

which has satisfactory linearity

•

Low collector-emitter saturation voltage V

CE(sat)

•

I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

7.0

±0.3

3.0

±0.2

2.0

±0.2

3.5

±0.2

Unit: mm

0˚ to 0.15˚

2.5

±0.2

12.6

±0.3

7.2

±0.3

1.1

±0.1

Parameter

Collector-base voltage

(Emitter open)

2SB1172

2SB1172A

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

T

a

=

25°C

Rating

−60

−80

−60

−80

−5

−3

−5

15

1.3

150

−55

to

+150

Unit

V

1.0

±0.2

0.75

±0.1

0.4

±0.1

2.3

±0.2

4.6

±0.4

0.9

±0.1

0˚ to 0.15˚

Collector-emitter voltage 2SB1172

(Base open)

2SB1172A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

V

1

2

3

V

A

A

W

°C

°C

1: Base

2: Collector

3: Emitter

I-G1 Package

Note) Self-supported type package is also prepared.

Junction temperature

Storage temperature

■

Electrical Characteristics

T

C

=

25°C

±

3°C

Parameter

Collector-emitter voltage

(Base open)

Base-emitter voltage

Collector-emitter cutoff

current (E-B short)

Collector-emitter cutoff

current (Emitter open)

2SB1172

2SB1172A

2SB1172

2SB1172A

I

EBO

h

FE1 *

h

FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

V

CE(sat)

f

T

t

on

t

stg

t

f

I

CEO

2SB1172

2SB1172A

V

BE

I

CES

V

CE

= −4

V, I

C

= −3

A

V

CE

= −60

V, V

BE

=

0

V

CE

= −80

V, V

BE

=

0

V

CE

= −30

V, I

B

=

0

V

CE

= −60

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

V

CE

= −4

V, I

C

= −1

A

V

CE

= −4

V, I

C

= −3

A

I

C

= −3

A, I

B

= −

0.375 A

V

CE

= −10

V, I

C

= −

0.5 A, f

=

10 MHz

I

C

= −1

A, I

B1

= −

0.1 A, I

B2

=

0.1 A

V

CC

= −50

V

30

0.5

1.2

0.3

70

10

−1.2

V

MHz

µs

µs

µs

Symbol

V

CEO

Conditions

I

C

= −30

mA, I

B

=

0

Min

−60

−80

−1.8

−200

−200

−300

−300

−1

250

mA



µA

V

µA

Typ

Max

Unit

V

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE2

Publication date: February 2003

Q

70 to 150

P

120 to 250

2.5

±0.2

■

Absolute Maximum Ratings

T

C

=

25°C

(1.0)

(1.0)

SJD00048AED

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