Power Transistors
P
C
— Ta
120
–20
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
T
C
=25˚C
I
B
=–300mA
2SB1155
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
V
CE(sat)
— I
C
(1) I
C
/I
B
=10
(2) I
C
/I
B
=20
T
C
=25˚C
Collector power dissipation P
C
(W)
100
(1)
Collector current I
C
(A)
–16
–3
80
–12
–200mA
–140mA
–100mA
–1
(2)
(1)
60
–8
–80mA
–60mA
– 0.3
40
– 0.1
20
(2)
(3)
–4
–40mA
–20mA
– 0.03
0
0
25
50
75
100
125
150
0
0
–2
–4
–6
–8
–10
–12
– 0.01
– 0.1
– 0.3
–1
–3
–10
–30
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–10
I
C
/I
B
=10
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
1000
–30
–10
–3
–1
T
C
=–25˚C
100˚C
25˚C
h
FE
— I
C
V
CE
=2V
–3
Forward current transfer ratio h
FE
300
T
C
=100˚C
25˚C
–25˚C
–1
T
C
=100˚C
100
– 0.3
25˚C
–25˚C
30
– 0.3
– 0.1
– 0.03
– 0.1
10
– 0.03
3
– 0.01
– 0.1
– 0.3
–1
–3
–10
–30
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
1
– 0.1
– 0.3
–1
–3
–10
–30
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
— I
C
1000
300
100
30
10
3
1
0.3
0.1
– 0.01 – 0.03 – 0.1 – 0.3
0.01
–1
–3
–10
0
–1
V
CE
=–10V
f=10MHz
T
C
=25˚C
10
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
–100
–30
I
CP
I
C
10ms
–3
–1
DC
Non repetitive pulse
T
C
=25˚C
t=1ms
–10
Transition frequency f
T
(MHz)
Switching time t
on
,t
stg
,t
f
(
µs
)
3
t
stg
1
t
on
0.3
t
f
0.1
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
–2
–3
–4
–5
–6
–7
–8
0.03
Collector current I
C
(A)
– 0.3
– 0.1
– 0.03
– 0.01
–1
–3
–10
–30
–100 –300 –1000
Collector current I
C
(A)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
