Power Transistors
2SB1155
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1706
Unit: mm
s
Features
q
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25˚C)
Ratings
–130
–80
–7
–25
–15
80
3
150
–55 to +150
Unit
V
V
V
21.0±0.5
15.0±0.2
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with
one screw
0.7
15.0±0.3
11.0±0.2
5.0±0.2
3.2
φ3.2±0.1
2.0±0.2
2.0±0.1
1.1±0.1
5.45±0.3
10.9±0.5
1
2
3
0.6±0.2
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –100V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –3A
V
CE
= –2V, I
C
= –8A
I
C
= –7A, I
B
= – 0.35A
I
C
= –15A, I
B
= –1.5A
I
C
= –7A, I
B
= – 0.35A
I
C
= –15A, I
B
= –1.5A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –7A, I
B1
= – 0.7A, I
B2
= 0.7A,
V
CC
= –50V
25
0.5
1.3
0.2
–80
45
90
30
– 0.5
–1.5
–1.5
–2.5
V
V
V
V
MHz
µs
µs
µs
260
min
typ
max
–10
–50
Unit
µA
µA
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
