This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1073G
P
C
T
a
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Copper plate at the
collector is more than
1 cm
2
in area, 1.7 mm
in thickness.
−1.2
I
C
V
CE
T
a
=
25°C
−12
I
C
V
BE
V
CE
= −2
V
Collector power dissipation P
C
(W)
−1.0
−10
I
B
= −200 µA
−180 µA
−160 µA
−140 µA
−120 µA
−100 µA
−80 µA
−60 µA
−40 µA
Collector current I
C
(A)
Collector current I
C
(A)
−
0.8
−8
25°C
−6
T
a
=
75°C
−25°C
0
20
40
60
80 100 120 140 160
Ambient temperature T
a
(
°C
)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
=
30
V
CE
= −2
V
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
−10
−1
T
a
=
75°C
−
0.1
25°C
−
0.01
−25°C
−
0.001
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
2
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pla d in
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ne clu
se
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:// ol d d d nte inte llow
ww lo is is na n
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se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
−20 µA
0
0
−2
−4
−6
−8
−10
−12
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
M
Di ain
sc te
on na
tin nc
ue e/
d
−
0.6
−
0.4
−4
−
0.2
−2
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
h
FE
I
C
C
ob
V
CB
600
120
Forward current transfer ratio h
FE
500
100
I
E
=
0
f
=
1 MHz
T
a
=
25°C
400
T
a
=
75°C
25°C
80
300
60
200
−25°C
40
100
20
0
−
0.01
−
0.1
−1
−10
0
−1
−10
−100
M
ain
te
na
nc
e/
Di
sc
on
tin
ue
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
SJD00332AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
