This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1073G
Silicon PNP epitaxial planar type
For low-frequency amplification
■
Features
■
Package
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
T
stg
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
tin
Parameter
ue
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CBO
V
EBO
I
CBO
I
EBO
h
FE
*1
Collector-base voltage (Emiter open)
Collector-emitter voltage (Base open)
V
CEO
te
na
nc
e/
Emiter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
V
CE(sat)
f
T
C
ob
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
120 to 205
R
180 to 315
Publication date: September 2007
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Rating
−30
−20
−7
−4
−7
1
Unit
V
V
V
M
Di ain
sc te
on na
tin nc
ue e/
d
•
Low collector-emitter saturation voltage V
CE(sat)
•
Large peak collector current I
CP
•
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
•
Code
MiniP3-F2
•
Pin Name
1: Base
2: Collector
3: Emitter
A
A
W
150
°C
−55
to
+150
°C
Conditions
Min
−30
−7
−20
■
Marking Symbol: I
Typ
Max
Unit
V
sc
on
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
EB
= −7
V, I
C
=
0
V
Di
V
V
CB
= −30
V, I
E
=
0
−
0.1
315
µA
V
−
0.1
−1.0
µA
ain
V
CE
= −2
V, I
C
= −2
A
120
I
C
= −3
A, I
B
= −
0.1 A
−
0.6
120
40
M
V
CB
= −6
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −20
V, I
E
=
0, f
=
1 MHz
MHz
pF
SJD00332AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
