Transistor
P
C
— Ta
1.6
–6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
–5
I
B
=–50mA
–45mA
–10
2SB1050
I
C
— V
CE
–12
V
CE
=–2V
I
C
— V
BE
Collector power dissipation P
C
(W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
Collector current I
C
(A)
Collector current I
C
(A)
–40mA
–35mA
–30mA
–25mA
–4
–8
Ta=75˚C
–6
25˚C
–25˚C
–3
–20mA
–15mA
–2
–10mA
–5mA
–4
–1
–2
0
40
60
80 100 120 140 160
0
–1
–2
–3
–4
–5
–6
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
h
FE
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
600
V
CE
=–2V
–100
–30
–10
–3
–1
V
CE(sat)
— I
C
I
C
/I
B
=30
240
f
T
— I
E
V
CB
=–6V
Ta=25˚C
Forward current transfer ratio h
FE
Ta=75˚C
500
25˚C
Transition frequency f
T
(MHz)
–10
200
400
160
300
–25˚C
120
Ta=75˚C
25˚C
–25˚C
200
– 0.3
– 0.1
– 0.03
80
100
40
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
0
–1
–3
1
3
10
30
100
300
1000
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
300
Collector output capacitance C
ob
(pF)
250
I
E
=0
f=1MHz
Ta=25˚C
200
150
100
50
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
