Transistor
2SB1050
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1
1.5
2.5±0.1
1.0
s
q
q
q
Features
Low collector to emitter saturation voltage V
CE(sat)
.
Large collector current I
C
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
2.4±0.2 2.0±0.2 3.5±0.1
1.0
0.45±0.05
1
1.0±0.1
R
0.
0.85
0.55±0.1
(Ta=25˚C)
Ratings
–30
–20
–7
–8
–5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
EIAJ:SC–71
M Type Mold Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –2A
*2
I
C
= –3A, I
B
= –0.1A
*2
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
*2
min
typ
1.25±0.05
s
Absolute Maximum Ratings
max
–100
–100
4.1±0.2
4.5±0.1
7
Unit
nA
nA
V
V
–20
–7
90
625
–1
120
85
V
MHz
pF
Pulse measurement
*1
h
FE
Rank classification
P
90 ~ 135
Q
120 ~ 205
R
180 ~ 625
Rank
h
FE
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
