Transistor
P
C
— Ta
500
–1200
Ta=25˚C
450
–1000
2SB1030, 2SB1030A
I
C
— V
CE
–100
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
Collector power dissipation P
C
(mW)
–30
–10
–3
–1
Ta=–25˚C
25˚C
75˚C
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Collector current I
C
(mA)
400
–800
I
B
=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
–600
–400
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–200
0
0
–2
–4
–6
–8
–10
–12
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=10
600
h
FE
— I
C
160
V
CE
=–10V
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
–1
–3
–10
140
120
100
80
60
40
20
400
300
Ta=75˚C
200
25˚C
–25˚C
100
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
0.1
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
20
240
I
E
=0
f=1MHz
Ta=25˚C
NV — I
C
V
CE
=–10V
Ta=25˚C
Function=FLAT
Collector output capacitance C
ob
(pF)
18
16
14
12
10
8
6
4
2
0
–1
200
Noise voltage NV (mV)
160
120
80
R
g
=100kΩ
22kΩ
40
4.7kΩ
0
–10
–3
–10
–30
–100
–30
–100
–300
–1000
Collector to base voltage V
CB
(V)
Collector current I
C
(
µA
)
2