Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A
4.0±0.2
Unit: mm
s
Features
q
q
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB1030
2SB1030A
2SB1030
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
(Ta=25˚C)
Ratings
–30
–60
–25
–50
–7
–1
– 0.5
300
150
–55 ~ +150
Unit
marking
+0.2
0.45–0.1
15.6±0.5
0.7±0.1
Optimum for high-density mounting.
Allowing supply with the radial taping.
3.0±0.2
V
1
2
3
emitter voltage 2SB1030A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
1.27 1.27
V
A
A
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
2.54±0.15
EIAJ:SC–72
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SB1030
2SB1030A
2SB1030
2SB1030A
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
*2
V
CE
= –10V, I
C
= –500mA
*2
I
C
= –300mA, I
B
= –30mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–30
–60
–25
–50
–7
85
40
– 0.35
200
6
*2
min
typ
max
– 0.1
–1
2.0±0.2
Unit
µA
µA
V
V
V
340
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
– 0.6
V
MHz
15
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
