2SB0976
P
C
T
a
1.0
−6
I
C
V
CE
T
a
=
25°C
I
B
= −40
mA
−35
mA
−30
mA
I
C
V
BE
−12
V
CE
= −2
V
Collector power dissipation P
C
(mW)
0.8
−5
−10
Collector current I
C
(A)
Collector current I
C
(A)
−25
mA
−4
−20
mA
−15
mA
−10
mA
−2
−5
mA
−8
T
a
=
75°C
25°C
0.6
−3
−6
−25°C
0.4
−4
0.2
−1
−2
−1
mA
0
−2
−4
−6
−8
−10
−12
0
0
40
80
120
160
0
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
30
1 000
h
FE
I
C
240
V
CE
= −2
V
f
T
I
E
V
CB
= −6
V
T
a
=
25°C
Forward current transfer ratio h
FE
−10
800
Transition frequency f
T
(MHz)
−1
−10
200
160
600
T
a
=
75°C
400
25°C
−25°C
−1
T
a
=
75°C
25°C
−25°C
120
80
−
0.1
200
40
−
0.01
−
0.01
−
0.1
−1
−10
0
−
0.01
−
0.1
0
1
10
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
200
I
E
=
0
f
=
1 MHz
T
a
=
25°C
160
120
80
40
0
−1
−10
−100
Collector-base voltage V
CB
(V)
2
SJC00064BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
