Transistors
2SB0976
(2SB976)
Silicon PNP epitaxial planar type
For low-frequency output amplification
For DC-DC converter
For stroboscope
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Large collector current I
C
0.7
±0.1
5.0
±0.2
Unit: mm
4.0
±0.2
0.7
±0.2
12.9
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−27
−18
−7
−5
−8
0.75
150
−55
to
+150
Unit
V
V
1
2 3
0.45
+0.15
–0.1
2.5
+0.6
–0.2
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.3
±0.2
V
A
A
W
°C
°C
5.1
±0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −10
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −2
V, I
C
= −2
A
I
C
= −3
A, I
B
= −
0.1 A
V
CB
= −6
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −20
V, I
E
=
0, f
=
1 MHz
125
−
0.4
120
60
Min
−18
−7
−100
−1
625
−1.0
Typ
Max
Unit
V
V
nA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
125 to 205
R
180 to 625
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00064BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
