This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0952, 2SB0952A
P
C
T
a
40
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−6
I
B
=–60mA
V
CE(sat)
I
C
−10
T
C
=25˚C
I
C
/I
B
=30
T
C
=100˚C
25˚C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
30
(1)
(1)T
C
=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
−5
–50mA
–45mA
–40mA
–35mA
–30mA
−4
−1
–25˚C
20
−3
–25mA
–20mA
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
V
BE(sat)
I
C
−10
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=30
−1
T
C
=–25˚C
100˚C
25˚C
−
0.1
ue
−
0.01
−
0.1
−1
−10
/D
C
ob
V
CB
isc
on
tin
Collector current I
C
(A)
ce
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
en
I
E
=0
f=1MHz
T
C
=25˚C
Collector current I
C
(A)
10
3
10
2
10
1
−
0.1
−1
−10
−100
−
0.01
0
−2
−4
−6
−8
−
0.01
−
0.1
−1
−10
2SB0952A
2SB0952
Collector-base voltage V
CB
(V)
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0
0
−1
−2
−3
−4
−5
−6
−
0.01
−
0.1
−1
−10
M
ain
Di
sc te
on na
tin nc
ue e/
d
−2
–15mA
−
0.1
10
–10mA
(2)
−1
(3)
–5mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
I
C
f
T
I
C
10
4
V
CE
=–2V
10
4
V
CE
=–10V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
10
3
10
3
T
C
=100˚C
25˚C
10
2
–25˚C
10
2
10
10
1
−
0.1
−1
−10
−100
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
t
on
, t
stg
, t
f
I
C
Safe operation area
−10
−100
Ma
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(–I
B1
=I
B2
)
V
CC
=–20V
T
C
=25˚C
an
Non repetitive pulse
T
C
=25˚C
int
−10
I
CP
I
C
−1
t=10ms
t=1ms
t
stg
−1
t=300ms
t
on
t
f
−
0.1
−
0.1
−100
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
SJD00031AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
