This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB0952
(2SB952)
, 2SB0952A
(2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
High-speed switching
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
10.0
±0.3
1.5
±0.1
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
1.5
+0
–0.4
4.4
±0.5
2.0
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage
(Emitter open)
2SB0952
Collector-emitter voltage 2SB0952
(Base open)
2SB0952A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
−20
−40
−5
−7
30
V
(6.5)
V
EBO
I
C
I
CP
P
C
T
j
V
A
−12
1.3
A
Collector power dissipation
Junction temperature
Storage temperature
W
1: Base
2: Collector
3: Emitter
N-G1 Package
T
a
=
25°C
Note) Self-supported type package is also prepared.
150
°C
°C
T
stg
−55
to
+150
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB0952
2SB0952
Conditions
Min
−20
−40
Typ
Max
(7.6)
2SB0952A
2SB0952A
2SB0952A
/D
Emitter-base cutoff current (Collector open)
ce
Forward current transfer ratio
h
FE2 *
Collector-emitter saturation voltage
int
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Ma
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
60 to 120
Q
90 to 180
P
130 to 260
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Rating
−40
−50
Unit
V
Unit
V
I
C
= −10
mA, I
B
=
0
V
CB
= −40
V, I
E
=
0
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
−50
−50
µA
µA
V
−50
260
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −2
A
I
C
= −5
A, I
B
= −
0.16 A
I
C
= −5
A, I
B
= −
0.16 A
45
60
−
0.6
−1.5
V
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
V
CB
= −10
V, I
E
= 0,
f
=
1 MHz
I
C
= −2
A
I
B1
= −66
mA, I
B2
=
66 mA
V
CC
= −20
V
150
MHz
140
0.1
0.5
0.1
MHz
µs
µs
µs
(1.5)
1
2
3
(8.5)
(6.0)
1.3
2.54
±0.3
1.4
±0.1
5.08
±0.5
0.8
±0.1
R = 0.5
R = 0.5
1.0
±0.1
0.4
±0.1
en
an
isc
on
tin
ue
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2003
SJD00031AED
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
