2SB0936, 2SB0936A
P
C
T
a
50
−12
(1)T
C
=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
I
B
=–100mA
–80mA
–60mA
–50mA
–40mA
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
T
C
=25˚C
V
CE(sat)
I
C
I
C
/I
B
=30
Collector power dissipation P
C
(W)
40
(1)
−10
Collector current I
C
(A)
−8
–35mA
–30mA
–25mA
−1
T
C
=100˚C
25˚C
–25˚C
30
−6
20
−4
–20mA
–15mA
−
0.1
10
(2)
(3)
0
0
40
80
120
160
−2
–10mA
–5mA
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
−10
I
C
/I
B
=30
h
FE
I
C
10
4
f
T
I
C
V
CE
=–2V
10
4
V
CE
=–10V
f=10MHz
T
C
=25˚C
Base-emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
10
3
T
C
=100˚C
25˚C
Transition frequency f
T
(MHz)
−10
−100
10
3
−1
T
C
=–25˚C
100˚C
25˚C
10
2
–25˚C
10
2
−
0.1
10
10
−
0.01
−
0.1
−1
−10
1
−
0.1
−1
1
–0.01
–0.1
–1
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
V
CB
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
t
on
, t
stg
, t
f
I
C
10
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(–I
B1
=I
B2
)
V
CC
=–20V
T
C
=25˚C
I
E
=0
f=1MHz
T
C
=25˚C
Safe operation area
−100
I
CP
Non repetitive pulse
T
C
=25˚C
t=1ms
I
C
t=10ms
t=300ms
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
1
t
stg
Collector current I
C
(A)
10
3
−10
10
2
−1
t
on
0.1
t
f
10
−
0.1
2SB0936A
2SB0936
1
−
0.1
−1
−10
−100
0.01
0
−2
−4
−6
−8
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
2
SJD00017BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
