2SB0936 参数 Datasheet PDF下载

Power Transistors

2SB0936

(2SB936)

, 2SB0936A

(2SB936A)

Silicon PNP epitaxial planar type

For low-voltage switching

■

Features

•

Low collector-emitter saturation voltage V

CE(sat)

•

High-speed switching

•

N type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment.

10.0

±0.3

1.5

±0.1

Unit: mm

8.5

±0.2

6.0

±0.2

3.4

±0.3

1.0

±0.1

4.4

±0.5

Parameter

Collector-base voltage

(Emitter open)

2SB0936

2SB0936A

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

a

=

25°C

T

j

T

stg

Rating

−40

−50

−20

−40

−5

−10

−20

40

1.3

150

−55

to

+150

Unit

V

2.0

±0.5

■

Absolute Maximum Ratings

T

C

=

25°C

Collector-emitter voltage 2SB0936

(Base open)

2SB0936A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

V

(6.5)

V

A

A

W

°C

°C

1 : Base

2 : Collector

3 : Emitter

N-G1 Package

Note) Self-supported type package is also prepared.

Junction temperature

Storage temperature

■

Electrical Characteristics

T

C

=

25°C

±

3°C

Parameter

Collector-emitter voltage

(Base open)

Collector-base cutoff

current (Emitter open)

2SB0936

2SB0936A

2SB0936

2SB0936A

I

EBO

h

FE1 *

h

FE2

Base-emitter voltage

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

(Common base, input open circuited)

Turn-on time

Storage time

Fall time

t

on

t

stg

t

f

I

C

= −3

A,

I

B1

= −

0.1 A, I

B2

= 0.1

A

V

CC

= −20

V

0.1

0.5

0.1

µs

µs

µs

V

BE(sat)

V

CE(sat)

f

T

C

ob

I

CBO

V

CB

=

−40

V, I

E

= 0

V

CB

=

−50

V, I

E

= 0

V

EB

=

−5

V, I

C

= 0

V

CE

= −2

V, I

C

= −

0.1 A

V

CE

= −2

V, I

C

= −3

A

I

C

=

−10

A, I

B

=

−

0.33 A

I

C

= −10

A, I

B

= −

0.33 A

V

CE

= −10

V, I

C

= −

0.5 A, f

=

10 MHz

V

CB

= −10

V, I

E

= 0,

f

=

1 MHz

100

400

45

90

260

−1.5

−

0.6

V

V

MHz

pF

Symbol

V

CEO

Conditions

I

C

= −10

mA, I

B

=

0

Min

−20

−40

−50

−50

−50

µA



µA

Typ

Max

Unit

V

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE1

Publication date: April 2003

Q

90 to 180

P

130 to 260

Note) The part number in the parenthesis shows conventional part number.

SJD00017BED

(7.6)

(1.5)

1

2

0.8

±0.1

R = 0.5

R = 0.5

2.54

±0.3

1.0

±0.1

1.4

±0.1

0.4

±0.1

5.08

±0.5

(8.5)

(6.0)

1.3

3

4.4

±0.5

0 to 0.4

14.4

±0.5

3.0

+0.4

–0.2

1.5

+0

–0.4

1