2SB0789, 2SB0789A
P
C
T
a
1.4
−1.2
I
C
V
CE
T
a
=
25°C
−18
mA
−16
mA
−14
mA
I
B
= −20
mA
I
C
I
B
−1.2
V
CE
= −10
V
T
a
=
25°C
Collector power dissipation P
C
(W)
1.2
1.0
0.8
0.6
0.4
0.2
0
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
−1.0
−1.0
Collector current I
C
(A)
−
0.8
−
0.6
−
0.4 mA
−
0.4
−
0.2 mA
−
0.2
0
Collector current I
C
(A)
−12
mA
−10
mA
−
0.8 mA
−
0.6 mA
−
0.8
−
0.6
−
0.4
−
0.2
0
20
40
60
80 100 120 140 160
0
−2
−4
−6
−8
−10
−12
0
0
−5
−10
−15
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
V
BE(sat)
I
C
−100
h
FE
I
C
600
V
CE
= −10
V
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
I
C
/ I
B
=
10
Forward current transfer ratio h
FE
500
−10
−10
400
25°C
−1
−1
T
a
=
75°C
25°C
−25°C
T
a
= −25°C
75°C
300
T
a
=
75°C
200
25°C
−25°C
100
−
0.1
−
0.1
−
0.01
−
0.01
−
0.1
−1
−10
−
0.01
−
0.01
−
0.1
−1
−10
0
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
200
180
V
CB
= −10
V
T
a
=
25°C
50
C
ob
V
CB
I
E
=
0
f
=
1 MHz
T
a
=
25°C
Transition frequency f
T
(MHz)
160
140
120
100
80
60
40
20
0
1
10
100
40
30
20
10
0
−1
−10
−100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
2
SJC00056CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
