Transistors
2SB0789, 2SB0789A
(2SB789, 2SB789A)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency driver amplification
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Large collector power dissipation P
C
4.5
±0.1
1.6
±0.2
1.5
±0.1
4.0
+0.25
–0.20
2.5
±0.1
3˚
0.4
±0.04
0.4
±0.08
1.5
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB0789
2SB0789A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
−100
−120
−100
−120
−5
−
0.5
−1
1
150
−55
to
+150
V
A
A
W
°C
°C
V
Unit
V
3˚
1.0
+0.1
–0.2
1
3
2
0.5
±0.08
45˚
3.0
±0.15
Collector-emitter voltage 2SB0789
(Base open)
2SB0789A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol:
•
2SB0789: D
•
2SB0789A: E
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion.
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
2SB0789
2SB0789A
V
EBO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
*1
*1
Symbol
V
CEO
Conditions
I
C
= −100 µA,
I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −5
V, I
C
= −500
mA
I
C
= −500
mA, I
B
= −50
mA
I
C
= −500
mA, I
B
= −50
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−100
−120
−5
90
50
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Forward current transfer ratio
*1
V
220
−
0.2
−
0.85
120
30
−
0.6
−1.20
V
V
MHz
pF
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2002
SJC00056CED
0.4 max.
2.6
±0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
