2SB0642
P
C
T
a
500
I
C
V
CE
−60
I
B
= −300 µA
−250 µA
−40
−200 µA
−150 µA
−100 µA
−50 µA
T
a
=
25°C
I
C
I
B
−60
V
CE
= −5
V
T
a
=
25°C
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
Collector current I
C
(mA)
−20
400
−50
−50
−40
300
−30
−30
200
−20
−20
100
−10
−10
0
0
20
40
60
80 100 120 140 160
0
0
−4
−8
−12
−16
0
0
−150
−300
−450
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(
µA
)
I
B
V
BE
−400
−350
−300
−250
−200
−150
−100
−50
0
−
0.6
−
1.2
−1.8
V
CE
= −5
V
T
a
=
25°C
−240
I
C
V
BE
V
CE
= −5
V
25°C
T
a
=
75°C
−25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
=
10
−200
Collector current I
C
(mA)
Base current I
B
(
µA
)
−1
−160
T
a
=
75°C
25°C
−25°C
−120
−
0.1
−80
−
0.01
−40
0
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
−
0.001
−1
−10
−100
−1
000
Base-emitter voltage V
BE
(V)
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
I
C
600
V
CE
= −10
V
160
140
V
CB
= −10
V
T
a
=
25°C
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
8
7
6
5
4
3
2
1
0
−1
C
ob
V
CB
I
E
=
0
f
=
1 MHz
T
a
=
25°C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
500
120
100
80
60
40
20
400
T
a
=
75°C
25°C
−25°C
300
200
100
0
−1
−10
−100
−1
000
0
0.1
1
10
100
−10
−100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
2
SJC00045BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
