Transistors
2SB0642
(2SB642)
Silicon PNP epitaxial planar type
For low-power general amplification
6.9
±0.1
(0.4)
Unit: mm
2.5
±0.1
(1.0)
(1.0)
3.5
±0.1
2.0
±0.2
2.4
±0.2
■
Features
•
High forward current transfer ratio h
FE
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(1.5)
(1.5)
R 0.9
R 0.7
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−60
−50
−7
−100
−200
400
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
3
1.0
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
(0.85)
1.25
±0.05
0.45
±0.05
0.55
±0.1
2
(2.5)
1
(2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common-emitter reverse transfer)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
CE
=
−10
V, I
C
=
−2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
80
3.5
160
Min
−60
−50
−7
−1
−1
460
−1
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
160 to 260
R
210 to 340
S
290 to 460
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00045BED
4.1
±0.2
4.5
±0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
