2SA0921
P
C
T
a
500
−24
I
C
V
CE
T
a
=
25°C
I
B
= −50 µA
−40 µA
−16
−35 µA
−30 µA
−12
−25 µA
−20 µA
−8
−15 µA
−10 µA
−4
−5 µA
−45 µA
−60
I
C
V
BE
V
CE
= −5
V
25°C
T
a
=
75°C
−25°C
Collector power dissipation P
C
(mW)
400
−20
−50
Collector current I
C
(mA)
Collector current I
C
(mA)
−40
300
−30
200
−20
100
−10
0
0
40
80
120
160
200
0
0
−2
−4
−6
−8
−10
−12
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
1 000
h
FE
I
C
V
CE
= −5
V
320
280
f
T
I
E
V
CB
= −5
V
T
a
=
25°C
Forward current transfer ratio h
FE
800
−10
Transition frequency f
T
(MHz)
−10
−100
240
200
160
120
80
40
600
T
a
=
75°C
400
25°C
−25°C
200
−1
25°C T
a
=
75°C
−25°C
−
0.1
−
0.01
−
0.1
−1
−10
−100
0
−
0.1
−1
0
0.1
1
10
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
9
8
I
E
=
0
f
=
1 MHz
T
a
=
25°C
NV
I
C
120
V
CE
= −10
V
G
V
=
80 dB
Function
=
FLAT
R
g
=
100 kΩ
100
7
6
5
4
3
2
1
0
−1
−10
−100
Noise voltage NV (mV)
80
60
22 kΩ
40
4.7 kΩ
20
0
−
0.01
−
0.1
−1
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
2
SJC00007BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
