Transistors
2SA0921
(2SA921)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
■
Features
0.7
±0.1
0.7
±0.2
Unit: mm
5.0
±0.2
5.1
±0.2
4.0
±0.2
•
High collector-emitter voltage (Base open) V
CEO
•
Low noise voltage NV
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−120
−120
−5
−20
−50
250
150
−55
to
+150
Unit
V
V
1
2 3
2.3
±0.2
12.9
±0.5
0.45
+0.15
–0.1
2.5
+0.6
–0.2
2.5
+0.6
–0.2
0.45
+0.15
–0.1
V
mA
mA
mW
°C
°C
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
NV
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
CE
=
−5
V, I
C
=
−2
mA
I
C
= −20
mA, I
B
= −2
mA
V
CB
= −5
V, I
E
=
2 mA, f
=
200 MHz
V
CE
=
−40
V, I
C
=
−1
mA, G
V
= 80 dB
R
g
= 100 kΩ, Function = FLAT
200
150
180
Min
−120
−120
−5
−100
−1
700
−
0.6
Typ
Max
Unit
V
V
V
nA
µA
V
MHz
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
180 to 360
S
260 to 520
T
360 to 700
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00007BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
