2SA2164
2SA2164_ P
C
-T
a
P
C
T
a
2SA2164_ I
C
-V
CE
I
C
V
CE
2SA2164_ I
C
-V
BE
I
C
V
BE
120
−25
T
a
=
25°C
I
B
= −300 µA
−250 µA
−30
V
CE
= −10
V
−25
Collector power dissipation P
C
(mW)
100
Collector current I
C
(mA)
−200 µA
−15
−150 µA
−100 µA
80
60
40
20
0
Collector current I
C
(mA)
−20
T
a
=
85°C
−20
25°C
−15
−10
−5
0
−
0.3
−
0.4
−
0.5
− 0.6 − 0.7 − 0.8 − 0.9 −1
−25°C
−10
−5
−50 µA
0
20
40
60
80
100 120 140
0
0
−2
−4
−6
−8
−10
−12
Ambient temperature T
a
(°C)
2SA2164_ V
CE(sat)
-I
C
Collector-emitter voltage V
CE
(V)
2SA2164_ h
FE
-I
C
Base-emitter voltage V
BE
(V)
2SA2164_ C
ob
-V
CB
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
−10
I
C
/ I
B
=
10
160
140
120
100
80
60
40
20
0
−0.1
−1
−10
−100
−25°C
T
a
=
85°C
25°C
V
CE
= −10
V
10
f = 1 MHz
Ta = 25°C
−1
Forward current transfer ratio h
FE
1
T
a
=
85°C
−
0.1
25°C
−25°C
−
0.01
−
0.1
−1
−10
−100
0.1
0
5
10
15
20
25
30
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector-base voltage V
CB
(V)
2
SJC00330AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
