Transistors
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
0.33
+0.05
–0.02
Unit: mm
0.10
+0.05
–0.02
Features
High transfer ratio f
T
SSS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
3
0.15 min.
0.80
±0.05
1.20
±0.05
0.52
±0.03
0 to 0.01
5°
0.15 min.
0.23
+0.05
–0.02
1
2
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
–30
–20
–5
–30
100
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
5°
SSSMini3-F1 Package
Marking Symbol : E
Electrical Characteristics
T
a
=
25°C±3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Emitter-base cut-off current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common-emitter reverse transfer capacitance
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
NF
Z
rb
C
re
Conditions
V
CE
= –10 V, I
C
= –1 mA
V
CB
= –10 V, I
E
=
0
V
CE
= –20 V, I
B
=
0
V
EB
= –5 V, I
C
=
0
V
CB
= –10 V, I
E
=
1
mA
I
C
= –10 mA, I
B
= –1 mA
V
CB
= –10 V, I
E
=
1
mA, f =
200
MHz
V
CB
= –10 V, I
E
=
1
mA, f =
5
MHz
V
CB
= –10 V, I
E
=
1
mA, f =
2
MHz
V
CB
= –10 V, I
E
=
1
mA, f =
10.7
MHz
150
70
–
0.1
300
2.8
22
1.2
Min
Typ
–
0.7
–
0.1
–100
–10
220
Max
Unit
V
µA
µA
µA
V
MHz
dB
Ω
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
0.15 max.
Publication date : December
2004
SJC00330AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
