2SA2162
2SA2162_ P
C
-T
a
P
C
T
a
2SA2162_ I
C
-V
CE
I
C
V
CE
2SA2162_ I
C
-V
BE
I
C
V
BE
120
−70
T
a
=
25°C
I
B
= −160 µA
−60
−100
−90
−140 µA
−120 µA
−100 µA
−80 µA
−60 µA
−40 µA
−20 µA
V
CE
= −2
V
Collector power dissipation P
C
(mW)
100
Collector current I
C
(mA)
80
60
40
20
0
−50
−40
−30
−20
−10
0
Collector current I
C
(mA)
−80
−70
−60
−50
−40
−30
−20
−10
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0 −1.2 −1.4
T
a
=
85°C
−25°C
25°C
0
20
40
60
80
100 120 140
0
−
0.5
−1.0 −1.5 −2.0 −2.5 −3.0
Ambient temperature T
a
(°C)
2SA2162_ V
CE(sat)
-I
C
Collector-emitter voltage V
CE
(V)
2SA2162_ h
FE
-I
C
Base-emitter voltage V
BE
(V)
2SA2162_ C
ob
-V
CB
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
−1
I
C
/ I
B
=
20
600
500
400
300
200
100
0
−1
T
a
=
85°C
V
CE
= −2V
100
f = 1 MHz
Ta = 25°C
Forward current transfer ratio h
FE
25°C
−25°C
−
0.1
T
a
=
85°C
−25°C
25°C
10
−
0.01
−
0.1
−1
−10
−100
−1 000
−10
−100
−1 000
1
0
5
10
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector-base voltage V
CB
(V)
2
SJC00323AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
