Transistors
2SA2162
Silicon PNP epitaxial planar type
For general amplification
Complementary to
2SC6036
0.33
+0.05
−0.02
Unit: mm
0.10
+0.05
−0.02
Features
Low collector-emitter saturation voltage V
CE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
3
0.15 min.
0.80
±0.05
1.20
±0.05
0.52
±0.03
0 to 0.01
5°
0.15 min.
0.23
+0.05
−0.02
1
2
(0.40) (0.40)
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
–15
–12
–5
–500
–1
100
125
–55 to +125
Unit
V
V
V
mA
A
mW
°C
°C
1: Base
2: Emitter
3: Collecter
5°
0.80
±0.05
1.20
±0.05
SSSMini3-F1 Package
Marking Symbol :
2U
Electrical Characteristics
T
a
=
25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10
µA,
I
E
=
0
I
C
= –1 mA, I
B
=
0
I
E
= –10
µA,
I
C
=
0
V
CB
= –10 V, I
E
=
0
V
CE
= –2 V, I
C
= –10 mA
I
C
= –200 mA, I
B
= –10 mA
V
CB
= –2 V, I
E
=
10
mA, f =
200
MHz
V
CB
= –10 V, f =
1
MHz
200
4.5
270
Min
–15
–12
–5
–
0.1
680
–250
Typ
Max
Unit
V
V
V
µA
mV
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
0.15 max.
Publication date : December
2004
SJC00323AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
