2SA2079
2SA2162_ P
C
-T
a
P
C
T
a
2SA2079_I
C
-V
CE
I
C
V
CE
2SA2079_I
C
-I
B
I
C
I
B
120
−60
−50
−40
T
a
=
25°C
T
a
= −300 µA
−250 µA
−200 µA
−140
−120
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
100
80
60
40
20
0
V
CE
= −10
V
T
a
=
25°C
Collector current I
C
(mA)
−100
−80
−60
−40
−20
0
−30
−150 µA
−20
−10
0
−100 µA
−50 µA
0
−2
−4
−6
−8
−10
−12
0
20
40
60
80
100 120 140
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0 −1.2
Ambient temperature T
a
(°C)
2SA2079_I
B
-V
BE
Collector-emitter voltage V
CE
(V)
2SA2079_I
C
-V
BE
Base current I
B
(mA)
2SA2079_V
CE(sat)
-I
C
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
−3.0
V
CE
= −10
V
T
a
=
25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
−3.5
−120
V
CE
= −10
V
−100
−1
I
C
/ I
B
=
10 V
Collector current I
C
(mA)
Base current I
B
(mA)
−2.5
−2.0
−1.5
−1.0
−
0.5
0
0
−80
−60
T
a
=
75°C
−25°C
25°C
−40
−20
0
−
0.1
T
a
=
75°C
−25°C
25°C
−
0.2
−
0.4
−
0.6
−
0.8
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0 −1.2
−
0.01
−1
−10
−100
Base-emitter voltage V
BE
(V)
2SA2079_h
FE
-I
C
Base-emitter voltage V
BE
(V)
2SA2079_C
ob
-V
CB
Collector current I
C
(mA)
h
FE
I
C
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
f
=
1 MHz
T
a
=
25°C
300
250
200
−25°C
150
100
50
0
−1
T
a
=
75°C
25°C
V
CE
= −10
V
Forward current transfer ratio h
FE
−10
−100
−1000
1
0
−8
−16
−24
−32
−40
Collector current I
C
(mA)
Collector-base voltage V
CB
(V)
2
SJC00326AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
