Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to
2SC5848
Features
High forward current transfer ratio h
FE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package:
0.6
mm
×
1.0
mm (hight
0.39
mm)
3
2
Unit: mm
1
1.00
±0.05
0.60
±0.05
0.39
+0.01
−0.03
0.15
±0.05
0.05
±0.03
0.35
±0.01
0.25
±0.05
0.50
±0.05
0.25
±0.05
1
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
–45
–45
–7
–100
–200
100
125
–55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
3
0.65
±0.01
2
0.05
±0.03
ML3-N2 Package
Marking Symbol :
3D
Electrical Characteristics
T
a
=
25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10
µA,
I
E
=
0
I
C
= –2 mA, I
B
=
0
I
E
= –10
µA,
I
C
=
0
V
CB
= –20 V, I
E
=
0
V
CE
= –10 V, I
B
=
0
V
CE
= –10 V, I
C
= –2 mA
I
C
= –100 mA, I
B
= –10 mA
V
CB
= –10 V, I
E
=
1
mA, f =
200
MHz
V
CB
= –10 V, I
E
=
0,
f =
1
MHz
180
–
0.2
80
2.2
Min
–45
–45
–7
–
0.1
–100
390
–
0.5
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Publication date : December
2004
SJC00326AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
