2SA2064
P
C
T
a
35
(1) T
C
=
T
a
(2) Without heat sink
−7
−6
30
I
C
V
BE
Collector to emitter saturation voltage V
CE(sat)
(V)
V
CE
= −2
V
−10
V
CE(sat)
I
C
I
C
/ I
B
= 20
Collector power dissipation P
C
(W)
Collector current I
C
(A)
(1)
25
20
15
10
5
(2)
0
0
20
40
60
80 100 120 140 160
−5
−4
−3
−2
−1
0
−1
−
0.1
−
0.01
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−
0.001
−
0.1
−1
−10
Ambient temperature T
a
(°C)
Base to emitter voltage V
BE
(V)
Collector current I
C
(A)
h
FE
I
C
10 000
T
a
=
25°C
V
CE
= −2
V
−100
I
CP
Safe operation area
Non repetitive pulse
T
C
= 25°C
I
C
t
=
1s
−1
t
=
1 ms
t
=
10 ms
1 000
100
Collector current I
C
(A)
−10
DC current gain h
FE
−
0.1
10
−
0.001
−
0.01
−
0.1
−1
−10
−100
−
0.01
−1
−10
−100
−1
000
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
R
th
t
1 000
T
a
=
25°C
Thermal resistance R
th
(°C/W)
100
(1)
(2)
10
1
0.1
0.001
(1) Without heat sink
(2) With a 100
×
100
×
2 mm Al heat sink
0.01
0.1
1
10
100
1 000
Time t (s)
2
SJD00285BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
