Power Transistors
2SA2064
Silicon PNP epitaxial planar type
Unit: mm
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■
Features
•
High speed switching (t
stg
: storage time/t
f
: fall time is short)
•
Low collector-emitter saturation voltage V
CE(sat)
•
Superior forward current transfer ratio h
FE
linearity
•
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
15.0
±0.5
9.9
±0.3
4.6
±0.2
2.9
±0.2
φ
3.2
±0.1
13.7
±0.2
4.2
±0.2
Solder Dip
1.4
±0.2
1.6
±0.2
0.8
±0.1
3.0
±0.5
2.6
±0.1
0.55
±0.15
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
−50
−50
−6
−10
−20
25
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
1
2
2.54
±0.30
5.08
±0.50
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
h
FE1
h
FE2
Collector-emitter saturation voltage
Turn-on time
Storage time
Fall time
V
CE(sat)
t
on
t
stg
t
f
Conditions
I
C
= −10
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
CE
= −2
V, I
C
= −1
A
V
CE
= −2
V, I
C
= −7
A
I
C
= −5
A, I
B
= −
250 mA
I
C
= −4
A, Resistance loaded
I
B1
= −
0.4 A, I
B2
=
0.4 A
V
CC
= −40
V
200
100
−
0.5
0.5
1.0
0.15
V
µs
µs
µs
Min
−50
−100
−100
Typ
Max
Unit
V
µA
µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00285BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
