This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1890
P
C
T
a
1.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
−1.2
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
=
10
Collector power dissipation P
C
(W)
1.0
−1.0
0.8
Collector current I
C
(A)
−
0.8
I
B
= −8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
T
a
=
75°C
25°C
−25°C
0.2
0
0
20
40
60
80 100 120 140 160
Ambient temperature T
a
(
°C
)
V
BE(sat)
I
C
−100
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
−10
−1
T
a
= −25°C
25°C
−75°C
−
0.1
−
0.01
−
0.01
−
0.1
−1
−10
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
60
50
40
20
10
0
−1
M
30
ain
te
na
nc
e/
−10
−100
Collector-base voltage V
CB
2
Di
I
E
=
0
f
=
1 MHz
T
a
=
25°C
sc
on
−1
000
(V)
tin
ue
Collector current I
C
(A)
Pl
pla d in
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ne clu
se
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ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
0
0
−2
−4
−6
−8
−10
−
0.001
−
0.01
−
0.1
−1
−10
M
Di ain
sc te
on na
tin nc
ue e/
d
0.6
−
0.6
−
0.1
0.4
−
0.4
−
0.2
−1
mA
−
0.01
Collector-emitter voltag V
CE
(V)
Collector current I
C
(A)
h
FE
I
C
f
T
I
E
300
V
CE
= −2
V
200
V
CB
= −10
V
T
a
=
25°C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
250
160
200
T
a
=
75°C
25°C
120
150
−25°C
80
100
50
40
0
−
0.01
−
0.1
−1
−10
0
1
10
100
Collector current I
C
(A)
Emitter current I
E
(mA)
SJC00036CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
