This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1890
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SC5026
■
Features
4.5
±0.1
1.6
±0.2
1.5
±0.1
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
•
Low collector-emitter saturation voltage V
CE(sat)
•
High collector-emitter voltage (Base open) V
CEO
•
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
1
0.4
±0.08
3
2
0.5
±0.08
1.5
±0.1
3˚
4.0
+0.25
–0.20
2.5
±0.1
3˚
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
T
stg
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
Parameter
tin
ue
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
Collector-base voltage (Emitter open)
Di
Collector-emitter voltage (Base open)
te
na
nc
e/
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
FE1
ain
h
FE2 *1
M
Collector-emitter saturation voltage
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
R
120 to 240
S
170 to 340
Publication date: November 2002
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1.0
+0.1
–0.2
0.4
±0.04
45˚
Rating
−80
−80
−5
−1
1
Unit
V
V
3.0
±0.15
V
A
1 : Base
2 : Collector
3 : Emitter
MiniP3-F1 Package
−1.5
150
A
W
°C
−55
to
+150
°C
Conditions
Min
−80
−5
−80
Typ
Max
Unit
V
sc
on
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
V
V
CB
= −40
V, I
E
=
0
−
0.1
340
µA
V
*2
V
CE
=
−2
V, I
C
=
−100
mA
V
CE
=
−2
V, I
C
=
−500
mA
120
60
I
C
= −500
mA, I
B
= −50
mA
I
C
= −500
mA, I
B
= −50
mA
−
0.2
120
15
−
0.3
−1.2
30
−
0.85
V
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
MHz
pF
0.4 max.
2.6
±0.1
SJC00036CED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
