2SA1791
P
C
T
a
150
I
C
V
CE
−120
T
a
=
25°C
−60
I
C
V
BE
V
CE
= −10
V
25°C
T
a
=
75°C
−25°C
Collector power dissipation P
C
(mW)
125
−100
−50
Collector current I
C
(mA)
Collector current I
C
(mA)
100
−80
I
B
= −300 µA
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
−40
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
−10
−1
−
0.1
25°C
T
a
=
75°C
−25°C
−
0.01
−1
−10
−100
−1
000
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
5
4
2
1
0
−1
M
3
ain
te
na
nc
e/
−10
Collector-base voltage V
CB
(V)
2
Di
6
I
E
=
0
f
=
1 MHz
T
a
=
25°C
sc
on
−100
tin
ue
Collector current I
C
(mA)
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
0
0
−2
−4
−6
−8
−10
−12
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−1.2
M
Di ain
sc te
on na
tin nc
ue e/
d
75
−60
−30
50
−40
−20
25
−20
−10
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
h
FE
I
C
f
T
I
E
600
600
V
CE
= −10
V
V
CB
= −10
V
T
a
=
25°C
Forward current transfer ratio h
FE
T
a
=
75°C
Transition frequency f
T
(MHz)
500
500
400
400
25°C
−25°C
300
300
200
200
100
100
0
−
0.1
−1
−10
−100
0
0.1
1
10
100
Collector current I
C
(mA)
Emitter current I
E
(mA)
SJC00032BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
