Transistors
2SA1791
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC4656
■
Features
0.2
+0.1
–0.05
3
Unit: mm
0.15
+0.1
–0.05
M
Di ain
sc te
on na
tin nc
ue e/
d
•
High forward current transfer ratio f
T
•
Small collector output capacitance C
ob
•
SS-Mini type package allowing downsizing of the equipment and
automatic insertion through the tape packing
1
(0.5) (0.5)
1.0
±0.1
1.6
±0.1
2
0.8
±0.1
1.6
±0.15
1˚
5˚
(0.3)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
f
T
ue
Collector-base voltage (Emitter open)
tin
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
te
na
nc
e/
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
200 to 400
R
250 to 500
M
Collector output capacitance
(Common base, input open circuited)
Publication date: March 2003
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
(0.4)
Rating
−50
−50
−5
−50
125
125
Unit
V
V
0 to 0.1
0.45
±0.1
V
mA
°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
mW
°C
Marking Symbol: AL
−55
to
+125
Conditions
Min
−50
−5
−50
Typ
0.75
±0.15
Max
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
0.2
±0.1
Unit
V
V
sc
on
V
V
CB
= −10
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
−
0.1
−100
500
µA
V
Di
µA
V
CE
= −10
V, I
C
= −2
mA
I
C
= −10
mA, I
B
= −1
mA
200
−
0.1
250
1.5
−
0.3
ain
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
MHz
pF
SJC00032BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
