2SA1790J
P
C
T
a
−25
T
a
=
25°C
I
B
= −250 µA
−200 µA
−15
−150 µA
−100 µA
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
V
CE(sat)
I
C
I
C
/ I
B
=
10
Collector power dissipation P
C
(mW)
120
−20
Collector current I
C
(mA)
−1
T
a
=
75°C
25°C
−25°C
80
−10
40
−
0.1
−5
−50 µA
0
0
0
40
80
120
0
−2
−4
−6
−8
−10
−12
−
0.01
−1
−10
−100
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
h
FE
I
C
V
CE
= −10
V
25°C
80
−25°C
60
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
T
a
=
75°C
100
f
=
1 MHz
T
a
=
25°C
100
Forward current transfer ratio h
FE
10
40
20
0
−
0.1
−1
−10
−100
1
0
−5
−10
−15
−20
Collector current I
C
(mA)
Collector-base voltage V
CB
(V)
2
SJC00291AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
