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2SA1790J 参数 Datasheet PDF下载

2SA1790J图片预览
型号: 2SA1790J
PDF下载: 下载PDF文件 查看货源
内容描述: 用于高频放大 [For high-frequency amplification]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 3 页 / 66 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SA1790J的Datasheet PDF文件第2页浏览型号2SA1790J的Datasheet PDF文件第3页  
Transistors
2SA1790J
Silicon PNP epitaxial planar type
1.60
+0.05
–0.03
1.00
±0.05
3
0.80
±0.05
For high-frequency amplification
Complementary to 2SC4626J
Features
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Unit: mm
0.12
+0.03
–0.01
1.60
±0.05
0.85
+0.05
–0.03
1
0.27
±0.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−30
−20
−5
−30
125
125
−55
to
+125
Unit
V
V
V
mA
mW
°C
°C
EIAJ: SC-89
SSMini3-F1 Package
0.70
+0.05
–0.03
1: Base
2: Emitter
3: Collector
Marking Symbol: E
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
NF
Z
rb
C
re
Conditions
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
=
−10
V, I
C
=
−1
mA
I
C
= −10
mA, I
B
= −1
mA
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
5 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
2 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
10.7 MHz
150
70
0.1
300
2.8
22
1.2
4.0
50
2.0
Min
Typ
0.7
0.1
−100
−10
220
Max
Unit
V
µA
µA
µA
V
MHz
dB
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
B
70 to 140
C
110 to 220
0.10 max.
(0.375)
Publication date: July 2003
SJC00291AED
1