2SA1790
P
C
T
a
150
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
−30
Collector power dissipation P
C
(mW)
125
−25
Collector current I
C
(mA)
100
−20
I
B
= −250 µA
−200 µA
−10
M
Di ain
sc te
on na
tin nc
ue e/
d
75
−15
−150 µA
−100 µA
−1
T
a
=
75°C
25°C
−25°C
50
−10
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
h
FE
I
C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
120
V
CE
= −10
V
Forward current transfer ratio h
FE
T
a
=
75°C
Transition frequency f
T
(MHz)
100
80
25°C
60
−25°C
40
20
0
−
0.1
−1
−10
−100
C
re
V
CE
sc
on
tin
ue
Collector current I
C
(mA)
Di
Common emitter reverse transfer capacitance C
re
(pF)
5
te
na
nc
e/
I
C
= −1
mA
f
=
10.7 MHz
T
a
=
25°C
4
16
3
Noise figure NF (dB)
Power gain G
P
(dB)
2
1
0
−1
−10
−100
Collector-emitter voltage V
CE
(V)
2
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0
0
−2
−4
−6
−8
−10
−
0.01
−
0.1
−1
−10
−100
25
−5
−50 µA
−
0.1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
f
T
I
E
C
ob
V
CB
600
6
V
CB
= −10
V
T
a
=
25°C
500
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
400
4
300
3
200
2
100
1
0
0.1
1
10
100
0
−
0.1
−1
−10
−100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
G
P
I
C
NF
I
E
24
20
V
CE
= −10
V
f
=
100 MHz
T
a
=
25°C
5
V
CB
= −10
V
f
=
100 MHz
T
a
=
25°C
4
ain
3
M
12
2
8
4
1
0
−
0.1
−1
−10
−100
0
0.1
1
10
Collector current I
C
(mA)
Emitter current I
E
(mA)
SJC00031BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
