2SA1790GB 参数 Datasheet PDF下载

Transistors

2SA1790

Silicon PNP epitaxial planar type

For low-frequency amplification

Complementary to 2SC4626

■

Features

0.2

+0.1

–0.05

3

Unit: mm

0.15

+0.1

–0.05

M

Di ain

sc te

on na

tin nc

ue e/

d

•

High transition frequency f

T

•

SS-Mini type package allowing downsizing of the equipment and

automatic insertion through the tape packing

0.8

±0.1

1.6

±0.15

1˚

■

Absolute Maximum Ratings

T

a

=

25°C

Parameter

Symbol

V

CBO

V

CEO

I

C

V

EBO

P

C

T

j

Collector-base voltage (Emitter open)

0 to 0.1

0.45

±0.1

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Collector power dissipation

Junction temperature

Storage temperature

T

stg

■

Electrical Characteristics

T

a

=

25°C

±

3°C

Parameter

Symbol

V

BE

ue

Base-emitter saturation voltage

tin

Collector-base cutoff current (Emitter open)

I

CBO

I

CEO

I

EBO

h

FE

f

T

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

te

na

nc

e/

Forward current transfer ratio

*

Collector-emitter saturation voltage

Transition frequency

Noise figure

V

CE(sat)

NF

Z

rb

C

re

Reverse transfer impedance

Reverse transfer capacitance

(Common emitter)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE

B

70 to 140

C

110 to 220

Publication date: March 2003

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1

(0.5) (0.5)

1.0

±0.1

1.6

±0.1

2

(0.4)

5˚

Rating

−30

−20

−5

−30

125

125

Unit

V

V

(0.3)

V

mA

°C

mW

°C

1: Base

2: Emitter

3: Collector

EIAJ: SC-75

SSMini3-G1 Package

−55

to

+125

Marking Symbol: E

Conditions

Min

Typ

0.75

±0.15

Max

V

CE

= −10 µA,

I

C

= −1

mA

V

CB

= −10

V, I

E

=

0

V

CE

= −20

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

−

0.7

0.2

±0.1

Unit

V

µA

µA



V

−

0.1

−100

−10

220

Di

sc

on

µA

V

CE

=

−10

V, I

C

=

−1

mA

I

C

= −10

mA, I

B

= −1

mA

70

−

0.1

300

2.8

22

V

CB

= −10

V, I

E

=

1 mA, f

=

200 MHz

V

CB

= −10

V, I

E

=

1 mA, f

=

5 MHz

V

CB

= −10

V, I

E

=

1 mA, f

=

2 MHz

150

MHz

dB

Ω

pF

4.0

60

M

ain

V

CB

= −10

V, I

E

=

1 mA, f

=

10.7 MHz

1.2

2.0

SJC00031BED

1