Transistor
P
C
— Ta
1.2
–1.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
–1.0
I
B
=–10mA
–1.0
2SA1762
I
C
— V
CE
–1.2
V
CE
=–10V
Ta=25˚C
I
C
— I
B
Collector power dissipation P
C
(W)
1.0
Collector current I
C
(A)
0.8
– 0.8
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0.6
– 0.6
0.4
– 0.4
0.2
– 0.2
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
Collector current I
C
(A)
–9mA
– 0.8
– 0.6
– 0.4
– 0.2
0
0
–2
–4
–6
–8
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–30
–10
–3
–1
25˚C
–25˚C
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–100
–30
–10
–3
–1
Ta=–25˚C
75˚C
I
C
/I
B
=10
300
h
FE
— I
C
V
CE
=–10V
Forward current transfer ratio h
FE
250
200
Ta=75˚C
25˚C
Ta=75˚C
25˚C
150
–25˚C
100
– 0.3
– 0.1
– 0.03
– 0.01
–1
– 0.3
– 0.1
– 0.03
– 0.01
–1
50
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
0
–1
–3
–10
–30
–100 –300 –1000
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
f
T
— I
E
120
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=–10V
f=200MHz
Ta=25˚C
60
I
E
=0
f=1MHz
Ta=25˚C
10
4
I
CBO
— Ta
V
CB
=–20V
Transition frequency f
T
(MHz)
100
50
10
3
40
80
I
CBO
(Ta)
I
CBO
(Ta=25˚C)
–3
–10
–30
–100
60
30
10
2
40
20
10
10
20
0
1
3
10
30
100
300
1000
0
–1
1
0
60
120
180
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Ambient temperature Ta (˚C)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
