Transistor
2SA1762
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC4606
6.9±0.1
1.5
2.5±0.1
1.0
1.0
2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s
Features
q
q
1.5 R0.9
R0.9
High collector to emitter voltage V
CEO
.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
0.4
1.0±0.1
R
0.
0.85
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
–80
–80
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
3
0.55±0.1
1.25±0.05
0.45±0.05
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
2
1
2.5
2.5
EIAJ:SC–71
M Type Mold Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –100µA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1 MHz
–80
–80
–5
130
50
100
– 0.2
– 0.85
85
11
20
– 0.4
–1.2
V
V
MHz
pF
330
min
typ
max
– 0.1
Unit
µA
V
V
V
*
h
FE1
Rank classification
R
130 ~ 220
S
185 ~ 330
Rank
h
FE1
4.1±0.2
4.5±0.1
7
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
