Transistor
P
C
— Ta
1.0
–80
Ta=25˚C
–70
–100
25˚C
Ta=75˚C
–80
2SA1123
I
C
— V
CE
–120
V
CE
=–5V
I
C
— V
BE
Collector power dissipation P
C
(W)
0.9
Collector current I
C
(mA)
–60
–50
–40
–30
–20
–10
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80 100 120 140 160
I
B
=–500µA
–450µA
–400µA
–350µA
–300µA
–250µA
–200µA
–150µA
–100µA
Collector current I
C
(mA)
0.8
–25˚C
–60
–40
–50µA
–20
0
0
–2
–4
–6
–8
–10
–12
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=10
600
h
FE
— I
C
300
V
CE
=–5V
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
–10
–30
–100
250
400
Ta=75˚C
300
200
25˚C
–25˚C
150
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
200
100
100
50
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
0
–1
–3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
6
Collector output capacitance C
ob
(pF)
5
I
E
=0
f=1MHz
Ta=25˚C
4
3
2
1
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
