Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2631
5.0±0.2
Unit: mm
4.0±0.2
q
q
q
13.5±0.5
q
Satisfactory foward current transfer ratio h
FE
collector current I
C
characteristics.
High collector to emitter voltage V
CEO
.
Small collector output capacitance C
ob
.
Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
(Ta=25˚C)
Ratings
–150
–150
–5
–100
–50
750
150
–55 ~ +150
Unit
5.1±0.2
s
Features
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
0.45
–0.1
1.27
+0.2
0.45
–0.1
1.27
+0.2
V
V
1 2 3
2.3±0.2
V
2.54±0.15
mA
mA
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
(Ta=25˚C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –0.1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30mA, I
B
= –3mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
150
200
5
300
–150
–5
130
450
–1
V
MHz
pF
mV
min
typ
max
–1
Unit
µA
V
V
*
h
FE
Rank classification
R
130 ~ 220
S
185 ~ 330
T
260 ~ 450
h
FE
Rank
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
