2SA0885
P
C
T
a
6
Power Transistors
I
C
V
CE
–1.5
T
C
=25˚C
–1.25
I
B
=–10mA
–9mA
–8mA
–7mA
–6mA
–0.75
–5mA
–0.5
–4mA
–3mA
–0.25
–2mA
–1mA
–1.0
–1.2
V
CE
=–10V
T
C
=25˚C
I
C
I
B
Collector power dissipation P
C
(W)
5
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
4
(1)
3
–1.0
Collector current I
C
(mA)
Collector current I
C
(A)
–0.8
–0.6
2
(2)
–0.4
1
–0.2
0
0 20 40 60 80 100 120 140 160 180 200
0
0
–2
–4
–6
–8
–10
0
0
–2
–4
–6
–8
–10
–12
Ambient temperature T
a
(˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
V
BE(sat)
I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–10
I
C
/I
B
=10
1000
h
FE
I
C
V
CE
=–10V
T
C
=100˚C
300
25˚C
–3
–3
Forward current transfer ratio h
FE
–1
–1
T
C
=–25˚C
100˚C
100
–25˚C
–0.3
25˚C
–0.1
T
C
=100˚C
–25˚C
–0.3
25˚C
30
–0.1
10
–0.03
–0.03
3
–0.01
–0.01
–0.03
–0.1
–0.3
–1
–0.01
–0.01
–0.03
–0.1
–0.3
–1
1
–0.01
–0.03
–0.1
–0.3
–1
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
200
50
C
ob
V
CB
–100
V
CER
R
BE
Collector to emitter voltage V
CER
(V)
I
E
=0
f=1MHz
T
C
=25˚C
I
C
=–10mA
T
C
=25˚C
Collector output capacitance C
ob
(pF)
Transition frequency f
T
(MHz)
V
CB
=–10V
180 f=200MHz
T
C
=25˚C
160
140
120
100
80
60
40
20
0
1
3
10
30
100
45
40
35
30
25
20
15
10
5
0
–1
–80
–60
–40
–20
–3
–10
–30
–100
0
0.1
0.3
1
3
10
30
100
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
