Power Transistors
2SA0885
(2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification
Complementary to 2SC1846
I
Features
•
Output of 3 W can be obtained by a complementary pair with
2SC1846
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ
3.16
±0.1
8.0
+0.5
–0.1
3.2
±0.2
3.8
±0.3
11.0
±0.5
1.9
±0.1
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
−45
−35
−5
−1.5
−1
1.2
*1
5
Junction temperature
Storage temperature
*2
0.75
±0.1
0.5
±0.1
0.5
±0.1
1.76
±0.1
2.3
±0.2
3
Unit
V
V
V
A
A
W
°C
°C
4.6
±0.2
16.0
±1.0
1
2
1: Emitter
2: Collector
3: Base
TO-126B Package
150
−55
to
+150
Note) *1: Without heat sink
*2: With a 100
×
100
×
2 mm A1 heat sink
I
Electrical Characteristics
T
C
=
25°C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
I
EBO
V
CBO
V
CEO
h
FE1 *
h
FE2
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Note) *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
V
CE(sat)
f
T
C
ob
Conditions
V
CB
=
−20
V, I
E
= 0
V
CE
=
−20
V, I
B
= 0
V
EB
=
−5V,
I
C
= 0
I
C
=
−10 µA,
I
E
= 0
I
C
=
−2
mA, I
B
= 0
V
CE
=
−10
V, I
C
=
−500
mA
V
CE
=
−5
V, I
C
=
−1
A
I
C
=
−500
mA, I
B
=
−50
mA
V
CB
=
−10
V, I
E
= 50 mA, f = 200 MHz
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
200
20
30
−45
−35
85
50
−
0.5
V
MHz
pF
340
Min
Typ
Max
−
0.1
−100
−10
Unit
µA
µA
µA
V
V
Note.) The Part number in the Parenthesis shows conventional part number.
3.05
±0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
