2SA0885
P
C
T
a
6
I
C
V
CE
−1.50
–1.2
I
C
I
B
T
C
=25˚C
I
B
=–10mA
–1.0
V
CE
=–10V
T
C
=25˚C
Collector power dissipation P
C
(W)
5
(1)With a 100
×
100
×
2 mm
Al heat sink
(2)Without heat sink
−1.25
Collector current I
C
(A)
4
(1)
3
−1.00
Collector current I
C
(A)
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
–0.8
−0.75
–0.6
2
(2)
−0.50
–0.4
1
−0.25
–0.2
0
0
40
80
120
160
200
0
0
−2
−4
−6
−8
−10
0
0
–2
–4
–6
–8
–10
–12
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
–10
V
BE(sat)
I
C
–10
h
FE
I
C
I
C
/I
B
=10
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
1 000
T
C
=100˚C
V
CE
=–10V
25˚C
–1
–1
T
C
=–25˚C
100˚C
25˚C
Forward current transfer ratio h
FE
100
–25˚C
T
C
=100˚C
25˚C
–0.1
–25˚C
–0.1
10
–0.01
–0.01
–0.1
–1
–0.01
–0.01
–0.1
–1
1
–0.01
–0.1
–1
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
V
CB
=–10V
f=200MHz
T
C
=25˚C
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
50
I
E
=0
f=1MHz
T
C
=25˚C
V
CER
R
BE
–100
I
C
=–10mA
T
C
=25˚C
200
Collector-emitter voltage
(V)
V
(Resistor between B and E)
CER
Transition frequency f
T
(MHz)
160
40
–80
120
30
–60
80
20
–40
40
10
–20
0
1
10
100
0
–1
–10
–100
0
0.1
1
10
100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
2
SJD00002BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
