2SA0885 参数 Datasheet PDF下载

Power Transistors

2SA0885

(2SA885)

Silicon PNP epitaxial planar type

Unit: mm

For low-frequency power amplification

Complementary to 2SC1846

■

Features

•

Output of 3 W can be obtained by a complementary pair with

2SC1846

•

TO-126B package which requires no insulation plate for installa-

tion to the heat sink

φ

3.16

±0.1

8.0

+0.5

–0.1

3.2

±0.2

3.8

±0.3

11.0

±0.5

1.9

±0.1

■

Absolute Maximum Ratings

T

a

=

25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

Rating

−45

−35

−5

−1

−1.5

1.2

5.0

*

0.75

±0.1

Unit

4.6

±0.2

0.5

±0.1

0.5

±0.1

2.3

±0.2

3

1.76

±0.1

V

V

V

A

A

W

°C

°C

1

2

150

−55

to

+150

Note) *: With a 100

×

100

×

2 mm Al heat sink

■

Electrical Characteristics

T

a

=

25°C

±

3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Symbol

V

CBO

V

CEO

I

CBO

I

CEO

I

EBO

h

FE1 *

h

FE2

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

(Common base, input open circuited)

2. *: Rank classification

Rank

h

FE1

Q

85 to 170

R

120 to 240

S

170 to 340

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2003

SJD00002BED

Conditions

I

C

=

−10 µA,

I

E

= 0

I

C

=

−2

mA, I

B

= 0

V

CB

= −20

V, I

E

=

0

V

CE

= −20

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

V

CE

= −10

V, I

C

= −500

mA

V

CE

= −5

V, I

C

= −1

A

I

C

= −500

mA, I

B

= −50

mA

V

CE

= −10

V, I

E

=

50 mA, f

=

200 MHz

V

CB

=

−10

V, I

E

= 0, f = 1 MHz

Min

−45

−35

Typ

16.0

±1.0

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

Max

−

0.1

−100

−10

85

50

−

0.5

200

20

30

340

V

CE(sat)

f

T

C

ob

MHz

pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

3.05

±0.1

Unit

V

V

µA

µA

µA





V

1