2SA0720A
P
C
T
a
800
−1.2
I
C
V
CE
T
a
=
25°C
I
B
= −10
mA
−9
mA
I
C
I
B
−1.2
V
CE
= −10
V
T
a
=
25°C
Collector power dissipation P
C
(mW)
−1.0
−1.0
Collector current I
C
(A)
−
0.8
400
−
0.6
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
−
0.4
200
−
0.2
Collector current I
C
(A)
600
−8
mA
−7
mA
−
0.8
−
0.6
−
0.4
−
0.2
0
0
40
80
120
160
0
0
−2
−4
−6
−8
−10
0
0
−2
−4
−6
−8
−10
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
V
BE(sat)
I
C
−100
h
FE
I
C
300
V
CE
= −10
V
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
I
C
/ I
B
=
10
−1
T
a
=
75°C
25°C
−25°C
−10
Forward current transfer ratio h
FE
250
200
T
a
=
75°C
25°C
25°C
−1
T
a
= −25°C
75°C
−
0.1
150
−25°C
100
−
0.01
−
0.1
50
−
0.001
−1
−10
−100
−1
000
−
0.01
−1
−10
−100
−1
000
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
200
V
CB
= −10
V
T
a
=
25°C
50
C
ob
V
CB
I
E
=
0
f
=
1 MHz
T
a
=
25°C
I
CEO
T
a
10
4
V
CB
= −20
V
Transition frequency f
T
(MHz)
160
40
10
3
30
120
I
CBO
(T
a
)
I
CBO
(T
a
=
25°C)
−10
−100
10
2
80
20
10
10
40
0
1
10
100
0
−1
1
0
40
80
120
160
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Ambient temperature T
a
(
°C
)
2
SJC00003BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
