欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SA0720A 参数 Datasheet PDF下载

2SA0720A图片预览
型号: 2SA0720A
PDF下载: 下载PDF文件 查看货源
内容描述: 对于低频驱动器放大互补 [For low-frequency driver amplification Complementary]
分类和应用: 驱动器
文件页数/大小: 3 页 / 72 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SA0720A的Datasheet PDF文件第2页浏览型号2SA0720A的Datasheet PDF文件第3页  
Transistors
2SA0720A
(2SA720A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1318A
Features
High collector-emitter voltage (Base open) V
CEO
Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
0.7
±0.1
5.0
±0.2
Unit: mm
4.0
±0.2
0.7
±0.2
12.9
±0.5
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−80
−70
−5
0.5
−1
625
150
−55
to
+150
Unit
V
V
2.3
±0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
5.1
±0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
V
A
A
mW
°C
°C
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
I
C
= −300
mA, I
B
= −30
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−80
−70
−5
Typ
Max
Unit
V
V
V
0.1
85
40
0.2
0.85
120
20
30
0.6
−1.50
240
µA
V
V
MHz
pF
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*1
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurment
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00003BED
1