IGBTs
2PG351
I
C
–V
CE
10
V
CE(sat)
– I
C
12V
10V
Collector-Emitter saturation voltage V
CE(sat)
(V)
V
GE
=12V
T
C
=25˚C
5
3
2
T
C
=0˚C
25˚C
I
C
–V
GE
120
V
CE
=10V
T
C
=25˚C
120
T
C
=25˚C
V
GE
=16V
14V
100
Collector current I
C
(A)
100
Collector current I
C
(A)
10
100
1000
80
8V
80
60
6V
40
1
60
0.5
0.3
0.2
100˚C
40
20
4V
0
0
2
4
6
8
10
Collector-Emitter voltage V
CE
(V)
20
0.1
0.01
0.1
1
0
0
5
10
15
20
Gate-Emitter voltage V
GE
(V)
Collector current I
C
(A)
C
ies,
C
oes,
C
res
– V
CE
Input capacitance, Output capacitance,
C
iss
, C
oss
, C
rss
(pF)
Feedback capacitance
V
CE,
V
GE
– Q
g
I
C
=5A
T
C
=25˚C
Collector-Emitter voltage V
CE
(V)
20
P
C
– Ta
(1) T
C
=Ta
(2) Without heat sink
(P
C
=1.3W)
16
(1)
12
V
GE
=0V
f=1MHz
T
C
=25˚C
C
ies
1000
200
V
CE
150
100
C
oes
Gate-Emitter voltage V
GE
(V)
10
Allowable collector dissipation P
C
(W)
100
V
GE
50
5
8
10
C
res
(2)
0
100
200
300
400
0
0
10
20
30
40
Gate charge amount Q
g
(nc)
0
50
0
0
40
80
120
160
Ambient temperature Ta (˚C)
Collector-Emitter voltage V
CE
(V)
PANASONIC [ PANASONIC SEMICONDUCTOR ]
