IGBTs
2PG351
2PG351
Insulated Gate Bipolar Transistor
s
Features
q
q
q
Unit : mm
7.0±0.3
3.0±0.2
3.5±0.2
High breakdown voltage : V
CES
= 400V
Large current control possible : I
C(peak)
=130A
7.2±0.3
Housing in the surface mounting package possible
M
Di ain
sc te
on na
tin nc
ue e/
d
10.0
-0
+0.3
q
For camera flash-light
s
Absolute Maximum Ratings
(Tc = 25˚C)
Parameter
Symbol
V
CES
I
C
V
GES
I
CP
P
C
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
400
5
DC
Pulse
Allowable power
dissipation
T
C
= 25˚C
Ta= 25˚C
Channel temperature
Storage temperature
T
ch
T
stg
s
Electrical Characteristics
(Tc = 25˚C)
is
Collector-Emitter breakdown voltage
Gate threshold voltage
Collector-Emitter saturation
voltage
co
Gate-Emitter leakage current
nt
I
GES
in
Collector-Emitter cut-off current
I
CES
ue
Parameter
Symbol
V
CES
e/
D
V
GE(th)
nc
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
Input capacitance
Rise time
Fall time
ai
nt
Turn-on time (delay time)
ea
M
Pl
Turn-off time (delay time)
pl d in
an c
se
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
1.0±0.2
0.75±0.1
0.4±0.1
2.3±0.2
4.6±0.4
s
Applications
0.8±0.2
1.1±0.1
0.85±0.1
Rating
±16
130
15
1.3
Unit
V
V
A
A
1
2
3
1 : Gate
2 : Collector
3 : Emitter
I Type Package
W
150
˚C
˚C
– 55 to +150
Condition
Min
Typ
Max
10
±1
5
2
Unit
µA
µA
V
V
V
V
CE
= 320V, V
GE
= 0
V
GE
= ± 12V, V
CE
= 0
I
C
=1mA, V
GE
= 0
400
1
V
CE
=10V, I
C
=1mA
V
GE
= 12V, I
C
= 5A
2.2
en
a
V
GE
= 12V, I
C
=130A
10
V
CE
=10V, V
GE
= 0, f=1MHz
1950
35
550
150
1.0
pF
ns
ns
ns
µs
V
CC
= 300V, I
C
=130A
V
GE
= 12V, R
g
= 25Ω
PANASONIC [ PANASONIC SEMICONDUCTOR ]
