TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
0.5
1.0
D = 0.5
0.2
0.1
0.05
0.02
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
2.0
5.0
t, TIME (ms)
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500
1.0 k
Figure 4. Thermal Response
10
0.5 ms
IC, COLLECTOR CURRENT (AMP)
5.0
1.0 ms
3.0
T
J
= 150°C
2.0 CURVES APPLY BELOW RATED V
CEO
1.0
0.5
0.3
0.2
0.1
5.0
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ T
C
= 25°C
(SINGLE PULSE)
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
40
10
20
60
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80 100
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active−Region Safe Operating Area
5.0
3.0
2.0
1.0
t, TIME (
μ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06
t
f
t
s
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
300
T
J
= 25°C
200
C, CAPACITANCE (pF)
C
ib
100
70
50
C
ob
0.1
0.2
0.4 0.6
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
4.0
6.0
30
0.5
1.0
2.0 3.0
5.0
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
30
50
Figure 6. Turn−Off Time
Figure 7. Capacitance
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